| PART |
Description |
Maker |
| BUX87 BUX86 Q68000-A5167 Q68000-A3870 |
TRANS PREBIASED NPN 150MW SOT523
NPN SILICON HIGH VWLTAGE SWITCHING TRANSISTORS
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| NESG3031M05-T1 NESG3031M05 |
NPN SILICON GERMANIUM RF TRANSISTOR
|
CEL[California Eastern Labs]
|
| BFR740L3RH |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| BFP740FE6327 BFP740F07 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| NESG260234-T1 NESG260234 NESG260234-T1-AZ |
NPN SILICON GERMANIUM RF TRANSISTOR
|
Duracell
CEL[California Eastern Labs]
|
| NESG340033 NESG340033-T1B |
NPN Silicon Germanium RF Transistor
|
Renesas Electronics Corporation
|
| BFU730LX-15 BFU730LX |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| BFU710F-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| BFU910F-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| 2SC3981 2SC3981A |
TRANS NPN 40V 350MW SMD SOT23 5 A, 800 V, NPN, Si, POWER TRANSISTOR
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| RQG1003UQAQF RQG1003UQ-TL-E |
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
RENESAS[Renesas Electronics Corporation]
|
| BFP64007 BFP640E6327 BFP640H6327 |
NPN Silicon Germanium RF Transistor
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
